GaAs对脉冲Nd:YAG激光器的调Q和锁模  

Passive Q-switching and mode locking of pulsed Nd:YAG laser with GaAs

作　　者：苏培林[1] 王加贤[1] 熊刚强[1] 张峻诚[1] 王娟娟[1] 

机构地区：[1]华侨大学信息科学与工程学院,泉州362021

出　　处：《激光杂志》2008年第3期17-18,共2页Laser Journal

基　　金：福建省自然科学基金(A0610023)

摘　　要：本文分析半导体材料GaAs对1064nm激光的可饱和吸收特性,在闪光灯抽运的平凹腔和平凸腔Nd:YAG激光器中,插入GaAs样品作为调Q器件,实现了激光器的被动调Q运转,分别获得脉冲宽度32.7ns(平凹腔)和30.9ns(平凸腔)的激光脉冲。实验上研究了平凹腔腔长和输出镜透过率对调Q激光输出性能的影响。当平凹腔腔长增加到125cm时,观察到GaAs对1064nm激光的被动锁模。对上述实验结果给予了合理的理论解释。The saturable absorption properties of semi - conduction GaAs for 1064nm laser was researched. In the flashlamp pumped Nd： YAG laser with a plane-concave cavity（PCAC） and a plane- convexity cavity（PCXC）, passive Q- switching of GaAs was realized. 32.7ns Q- switched laser pulse from the PCAC and 30.9ns Q - switched laser pulse from the PCXC were obtained. The effect of cavity - length and transmission of the output mirror to the laser＇ s properties in the PCAC was studied. When the cavity - length of PCAC increased to 125cm, the passive mode locking of GaAs to 1064nm laser can be observed. The experimental resolts mentioned above were analyzed theoretically.

关 键 词：GAAS 可饱和吸收 被动调Q 深能级EL2 

分 类 号：TN248.1[电子电信—物理电子学]