磁控溅射法制备PVD薄膜晶格结构分析  

Crystal Lattice Structure Analysis of PVD Thin Film Produced by Magnetron Sputtering Method

作　　者：阿苏娜[1] 李国新[1] 王广海[1] 

机构地区：[1]北京理工大学宇航科学技术学院,北京100081

出　　处：《材料导报（纳米与新材料专辑）》2008年第1期215-216,共2页

基　　金：国家安全重大基础研究项目(513390303)

摘　　要：对物理气相沉积(PVD)薄膜材料和固体金属材料进行了XRD扫描分析。结果表明,PVD薄膜晶体与固体金属晶体未出现明显变化,但衍射峰呈现宽化。由于磁控溅射技术制备出的PVD薄膜晶粒是堆层沉积,致使PVD薄膜出现晶格不完整性,即存在各种晶格缺陷和晶格畸变。PVD薄膜晶格缺陷是导致薄膜材料电性能变化的主要原因。The thin film produced by PVD method and solid metal are analysed by XRD. The results indicate that there is no evident change between PVD film and solid metal, but the diffraction peak of the PVD film is broadened. The crystal particulates of PVD film produced by magnetron sputtering method are piled layer by layer, which result that the crystal lattice structure is not full and has various disfigurements. The disfigurement of PVD film is the main reason that results in electrical capability change of thin film.

关 键 词：衍射峰 薄膜 磁控溅射 晶体结构 

分 类 号：TB383[一般工业技术—材料科学与工程] O48[理学—固体物理]