低介电常数介孔氧化硅薄膜的结构与介电性能研究  

Research on Configuration and Dielectric Properties of Mesoporous SiO_2 Low-k Films

作　　者：吴兆丰[1] 姚兰芳[2] 

机构地区：[1]盐城工学院基础部,盐城224003 [2]上海理工大学物理系,上海200093

出　　处：《材料导报（纳米与新材料专辑）》2008年第1期332-334,共3页

基　　金：上海市重点学科建设项目资助

摘　　要：利用溶胶-凝胶技术制备了介孔氧化硅薄膜。采用MIM结构,通过平行板电容器法测量了介孔氧化硅薄膜的介电常数,结果表明采用表面修饰的方法可以在保持较低介电常数(k=2.25)的前提下极大地降低薄膜的漏电流,提高薄膜的环境稳定性能。通过对富氏红外光谱的分析,讨论了薄膜的键结构与介电性能之间的关系,结果表明去除介孔氧化硅薄膜中的OH基团是提高薄膜介电性能的关键。Mesoporous SiO2 films are prepared by the Sol-gel process in this paper. The dielectric constant is determined by capacitance-frequency measurements of the MIM structure. The results show that the leakage current can be reduced obviously on the premise that k is kept at a lower value by HMDS treatment. The FTIR spectra of the films are measured to find the relationship of the dielectric properties and bonding configuration. With the analysis of the bond structure of the films before and after HMDS treatment, it can be infered that the hydroxyl groups play an crucial role in improving the dielectric properties of the films.

关 键 词：低介电常数 介孔氧化硅薄膜 MIM结构 

分 类 号：TB43[一般工业技术] TN41[电子电信—微电子学与固体电子学]