用于微波电路的单层片式晶界层电容器  

Grain Boundary Layer Cermaic Single Layer Chip Capacitor for Microwave Circuit

作　　者：程超 蔡杨 杨俊峰 冯毅龙 赵海飞 

机构地区：[1]广州翔宇微电子有限公司,广州510288

出　　处：《微波学报》2007年第B08期112-115,共4页Journal of Microwaves

基　　金：科技部中小企业创新基金(06C26214401624);广东省广州市科技计划基金(20051040052)

摘　　要：研究了施主掺杂还原气氛烧结的SrTiO3基半导体瓷的组成与性能关系。通过等效电路分析,XRD、SEM显微结构观察,探讨晶界效应及其特性对瓷料性能作用的机理,从而制成介电系数可调(10000～50000),电容量变化率低(≤±4.7%～≤±22%),使用温域宽(-55℃～+125℃)的单层片式晶界层电容器瓷片。通过在瓷片上溅射和电镀方法制作电极,并以光刻腐蚀,精密加工成通用型、表面贴装型、多电极型和阵列型的单层片式电容器,用于微波电路。The relationship of the composition and properties of donor doping SrTiO3 semiconductor ceramic that sintered in the reducing atmosphere were studied. Through equivalent circuit analysis and XRD, SEM, we discussed the mechanism that grain boundaries effect and characteristics affected ceramic performance, which made the dielectric constant of grain boundary layer ceramic substrate for single layer chip capacitor are adjustable （10000-50000）, and the capacitance change rate was low（≤± 4.7%-≤±22%）, and the adaptable temperature range was wide （-55 ℃ ±125 ℃）. By sputtering and electroplating, the ceramic substrates were plated electrode. By photolithography, corrosion and precision machining, the substrates with electrode were manufactured into general single layer chip capacitor, surface mounted single layer chip capacitor, multi-pad single layer chip capacitor and single layer chip capacitor array for microwave ciruit.

关 键 词：单层片式电容器 晶界层 介电系数 温度特性 系列产品 

分 类 号：TM53[电气工程—电器]