耐辐射球菌N^+离子注入后自由基变化的研究  

Effects of Ion Implantation on Free Radicals Forming and Scavenging of Deinoeoecus Radiodurans

作　　者：吕平[1] 杨柳枝[2] 

机构地区：[1]天津大学化工学院 [2]天津职业大学

出　　处：《中国辐射卫生》2008年第2期149-150,共2页Chinese Journal of Radiological Health

基　　金：天津市高等学校科技发展基金(2005C003)

摘　　要：目的研究耐辐射球菌(Deinococcusr adiodurans)N+注入后自由基产生的剂量效应和清除的时间效应。方法对耐辐射球菌进行γ射线照射和N+离子注入后用ESR波谱测定自由基含量。结果随着N+离子剂量的增加,耐辐射球菌自由基生成量先升高,再下降,最后在上升。在较高N+离子剂量下,随着注入后时间的延长,自由基含量降低;在较低剂量下,自由基的生成量较高。结论抗辐射菌株对高剂量N+离子辐射有较强的自由基消除能力,但在低高剂量时反而比较弱,出现这种情况的原因比较复杂,需要进一步研究。Objective To study of the effects of N^＋ ion implantation on free radicals forming and scavenging were investigated in Dr （Deinococcus radiodurans） and the relationship between AFR （the amount of free radicals） and DNI （dose of N ＋ implantation） in Dr. Methods AFR in Dr was studied with ESR after N ＋ implantation and γ- radiation. Results It is proved that AFR in Dr ascended at first, then descended after reaching the peak, finally ascended again with increase of DNI. In high dose, AFR descended after Dr irradiated, while in low dose, AFR ascended. Conclusion scavenging effects of Dr against free radicals from high DNI were stronger than that from low DNI.

关 键 词：耐辐射菌 自由基 N^+离子 

分 类 号：Q506[生物学—生物化学]