射频功率对硼碳氮薄膜的组分和厚度的影响  

Influence of sputtering power on composition and thickness of boron carbon nitride thin films

作　　者：王玉新[1] 郑亚茹[1] 宋哲[1] 冯克成[2] 

机构地区：[1]辽宁师范大学物理与电子技术学院,辽宁大连116029 [2]长春理工大学理学院,吉林长春130022

出　　处：《辽宁师范大学学报（自然科学版）》2008年第2期155-157,共3页Journal of Liaoning Normal University:Natural Science Edition

基　　金：国家自然科学基金资助项目(59831340);大连市科学技术基金资助项目(2007J23JH029)

摘　　要：利用射频磁控溅射方法以不同的射频功率（80～130W）在硅衬底上制备出一组硼碳氮（BCN）薄膜．傅里叶红外吸收光谱（FTIR）和X射线光电子能谱（XPS）测量发现样品的组成原子之间均实现了原子级化合．射频功率对薄膜的组分和厚度有很大影响，二者随射频功率的增大而呈规律性变化．B、N元素含量高、C元素含量低的硼碳氮薄膜较厚．并且，射频功率为110W条件下制备的硼碳氮薄膜中C元素含量最低，薄膜最厚．Boron carbon nitride （BCN） thin films were deposited on silicon substrate by RF magnetron sputtering at different sputtering power （80 - 130 W）. Fourier transform infrared absorption spectroscopy （FTIR） and X-ray photoelectron spectroscopy （XPS） results suggested that the films were atomic-level hybrids composed of B, C and N atoms. The compositions and thickness of samples were strongly influenced by sputtering power. They changed regularly with the rising of sputtering power. The higher the B and N contents, the lower the C contents, the thicker the films. And the BCN thin films that were deposited at the sputtering power of 110 W possessed the lowest atomic number of C and the biggest thickness.

关 键 词：射频磁控溅射 硼碳氮薄膜 X射线光电子能谱 射频功率 

分 类 号：O484.1[理学—固体物理]