一种基于亚阈值MOS低电压基准源单元电路的设计  

The Design of Unit-Circuit of Low-Voltage Reference Source Based on Sub-Threshold MOS

作　　者：熊元新[1] 刘艺峰[1] 文康珍[1] 

机构地区：[1]武汉大学电气工程学院,武汉430072

出　　处：《电力学报》2008年第2期81-83,共3页Journal of Electric Power

基　　金：国家自然科学基金项目资助(50577046)

摘　　要：电压基准作为一个基本的单元电路,在很多电路设计中都占有极其重要的地位。为了满足新型微电子产品对电压基准提出的更高要求,提出了一种基于亚阈值MOS的低电压基准源单元电路,该基准源单元电路采用TSMC0.35μm工艺设计,具有较低的工作电压1.5 V,输出电压基准低达264.5 mV,仿真验证该基准源单元电路温度系数为36 ppm/℃,具有较好的温度系数。对此类器件的设计和研发具有重要意义。As a basic unit-circuit,voltage reference is essential in many circuits. To meet the even higher reguirements of new types of microelectronic products for voltage reference,a unitcircuit of low-voltage reference source based on sub-threshold MOS has been developed. This circuit is designed with TSMC 0.35 μm technology and has a lower working-voltage of 1.5 V. And its output voltage reference can be as low as 264. 5 mV. Simulation tests prove that its temperature index is 36 ppm/C, which is a good figure. It is significant in the design and development of this type of apparatus.

关 键 词：电压基准 亚阈值 CMOS 

分 类 号：TN01[电子电信—物理电子学]