退火对N-In共掺杂p型ZnO薄膜结构和光电性质的影响  

Effects of Annealing on the Microstructure,Electrical and Optical Properties of N-In Codoped p-Type ZnO Films

作　　者：秦国平[1] 孔春阳[1] 阮海波[1] 南貌[1] 朱仁江[1] 

机构地区：[1]重庆师范大学物理与信息技术学院,重庆400047

出　　处：《重庆师范大学学报（自然科学版）》2008年第1期64-66,72,共4页Journal of Chongqing Normal University:Natural Science

基　　金：重庆市自然科学基金(No.AC4034);重庆市教委项目(No.KJ050812)

摘　　要：利用射频磁控溅射结合离子注入的方法在石英玻璃衬底上成功地实现了ZnO薄膜的N-In共掺杂,借助于XRD、霍耳测试、透射谱测试等手段分析了不同退火条件下对ZnO薄膜的结构及光电性质的影响。实验结果表明,在氮气环境下,退火温度介于550-600℃,退火时间控制在5-10 min内,可以获得较稳定的p型ZnO薄膜。其中,经过580℃退火20 min的ZnO薄膜具有最佳的电学特性,即空穴浓度达到1.22×10^18cm^-3,迁移率为2.19 cm2V-1s^-1,电阻率是2.33Ωcm。另外,制备的ZnO薄膜在可见光范围内都有很好的透射率,其常温下的禁带宽度为3.25 eV,相对块材本征ZnO的禁带宽度略有减小。N-In codoped ZnO thin films on quartz glass substrates can be fabricated by using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）. The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by x-ray diffraction （XRD）, Hall measurements system and transmission spectrum. The experimental results suggest that an appropriate annealing temperature and time play an important rule in the micrustructure, electronic and optical properties, especially the types of conduction of ZnO films. When the annealing temperature is in the range of 550-580℃ and annealing time changes from 5 to 10 min, N-In codoped p-type ZnO films can be obtained. It is noticeable that the film annealed for 20 min at 580℃ exhibits the optimal p-type electrical properties with hole concentration of 1.22 × 10^18cm^-3, hall mobility of 2.19 cm^2 V^-1s^-1, and low resistivity of about 2.33 Ωcm, as well as good film quality among all the samples. It is also found that all ZnO films annealed have no significant variance over absorption edze. whose wavelength is at 378nm. corresponding to energy of 3.25eV.

关 键 词：N-In共掺杂 P型ZNO 退火 透射谱 

分 类 号：TN304.055[电子电信—物理电子学] TN304.22