一种用于双极电路ESD保护的SCR结构  

SCR Structure for ESD Protection of Bipolar Integrated Circuits

作　　者：朱坤峰[1] 徐世六[2] 张正元[2] 

机构地区：[1]重庆大学光电工程学院,重庆400044 [2]模拟集成电路国家级重点实验室

出　　处：《微电子学》2008年第3期411-414,419,共5页Microelectronics

摘　　要：针对目前双极电路的ESD保护需求,结合双极电路的特点和制造工艺,设计了一种可控硅整流器(SCR)结构。使用器件仿真工具MEDICI,对器件的结构参数进行了优化设计,得到的ESD电压大于3kV,很好地满足了设计要求。Based on specific requirements of bipolar ICes for ESD protection, and considering circuit characteristics and its processing technology, an SCR structure was designed. Structural parameters of the device were optimized by using MEDICI simulator, and an ESD protection voltage above 3 kV was obtained, which met the requirements of the design.

关 键 词：静电保护 可控硅整流器 双极集成电路 

分 类 号：TN433[电子电信—微电子学与固体电子学]