一种工作于亚阈值区的低功耗CMOS晶体振荡器  

A Low-Power Subthreshold CMOS Crystal Oscillator

作　　者：孟新[1] 马成炎[2] 叶甜春[1] 殷明[2] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]杭州中科微电子有限公司,杭州310053

出　　处：《微电子学》2008年第3期435-438,共4页Microelectronics

摘　　要：提出了一种基于亚阈值区的低功耗CMOS晶体振荡器电路。通过环路增益和相位的分析,得出了一般晶体振荡电路的振荡性能优化条件;并通过亚阈值电流源、亚阈值MOS管反馈、电流源放大缓冲级以及电路的其他改进,进一步优化振荡电路的性能。根据这种设计,采用SMIC0.18μm CMOS单层多晶硅六层金属工艺,实现了一个功耗电流0.7μA的CMOS晶体振荡器。A low-power crystal oscillator with subthreshold MOS transistors was presented. Based on the analysis of the loop gain and phase, optimized conditions for improvement of conventional oscillator circuits were obtained. And improvements were also made on the subthreshold current source, feedback of the subthreshold MOS transistors, amplifier buffer of the current source and other circuit design, to further optimize the oscillator circuit. Based on the proposed design, a crystal oscillator with 0. 7 μA of power was implemented using SMIC＇s 0, 18 μm CMOS single-poly six-metal process.

关 键 词：亚阈值 CMOS集成电路 晶体振荡器 环路增益 

分 类 号：TN752[电子电信—电路与系统] TN384