Transient Characteristics of a Nonlinear GaAs Photoconductive Semiconductor Switch  

非线性GaAs光电导开关的瞬态特性分析(英文)

作　　者：王馨梅[1] 施卫[1] 屈光辉[1] 田立强[1] 

机构地区：[1]西安理工大学,西安710048

出　　处：《Journal of Semiconductors》2008年第6期1108-1110,共3页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:50477011)~~

摘　　要：The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation of energy in the switch circuit. This method resolves the problem of directly measuring the transient characteristics of PCSS in nonlinear mode. The curve of transient voltage shows that the average electric field of PCSS in the lock-on period is always higher than the Gunn threshold,and increases monotonically. By comparing the transient power curves of the PCSS and the electrical source,it is demonstrated directly that the power shortage leads to the PCSS from the lock-on state into the selfturnoff state,so a controllable turnoff of the PCSS in lock-on by changing the distribution of the circuit power is predicted.基于能量守恒原理推导出非线性GaAs光电导开关电路的差分公式,代入实验数据计算出开关的瞬态电压、电阻、功率.该方法解决了长期以来非线性GaAs光电导开关的瞬态特性难于测量的问题.通过GaAs光电导开关的瞬态电压曲线知,在锁定期间开关平均电场强度总是大于耿氏阈值,并随时间单调递增.通过对比开关与其电路电源的瞬态功率曲线,证明了电源功率不足是导致GaAs光电导开关从锁定状态进入自关断状态的根本原因,因此提出了在锁定期间通过改变电路的功率分布使开关可控关断的思想.

关 键 词：photoconductive semiconductor switch lock-on effect nonlinear mode controllable turnoff 

分 类 号：TN36[电子电信—物理电子学]