激光晶化形成纳米硅材料的场电子发射性质研究  

Electron field emission of nanocrystalline Si prepared by laser crystallization

作　　者：周江[1] 韦德远[1] 徐骏[1] 李伟[1] 宋凤麒[1] 万建国[1] 徐岭[1] 马忠元[1] 

机构地区：[1]南京大学物理系,固体微结构物理国家重点实验室,南京210093

出　　处：《物理学报》2008年第6期3674-3678,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60425414);国家重点基础研究项目(批准号:2007CB613401)资助的课题~~

摘　　要：利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8·5V/μm,而场发射电流密度可以达到0·1mA/cm2.激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释.The electron field emission characteristics of nanocrystalline Si thin films prepared by KrF excimer laser crystallization of ultrathin amorphous Si films and subsequent thermal annealing is reported. Stable and reproducible field emission behavior can be observed for the crystallized Si films. The turn-on electric field is reduced from 17 V/μm for the as-deposited sample to 8.5 V/μm for the crystallized one, and the emission current density can reach as high as 0.1 mA/cm2. The improvement in field emission characteristics is attributed to both the change of film surface and the formation of high-density nanocrystalline Si, which induces the enhancement of internal local electric field.

关 键 词：纳米硅 场发射 激光晶化 

分 类 号：TN244[电子电信—物理电子学]