InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究  

Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

作　　者：陈小雪[1] 滕利华[1] 刘晓东[1] 黄绮雯[1] 文锦辉[1] 林位株[1] 赖天树[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室,物理科学与工程技术学院,广州510275

出　　处：《物理学报》2008年第6期3853-3856,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60490295,60678009);高等学校博士学科点专项科研基金(批准号:20050558030)资助的课题~~

摘　　要：采用飞秒时间分辨圆偏振光抽运-探测光谱对In0·1Ga0·9N薄膜的电子自旋注入和弛豫进行了研究.获得初始自旋偏振度约为0·2,此结果支持在圆偏振光激发下,重、轻空穴带的跃迁强度比为3∶1,而不支持1∶1或1∶0·94的观点·同时获得自旋偏振弛豫时间为490±70ps,定性分析了自旋弛豫机理,认为BAP机理是电子自旋弛豫的主要机理.The injection and relaxation of electron spins in In0.1Ga0.9N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 0.2 was obtained, which agrees with 3∶1 ratio of heavy-to light-hole valence bands in transition strength, but not with the 1∶1 or 1∶0.94 ratios. A spin relaxation lifetime of 490±70 ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.

关 键 词：电子自旋 INGAN 自旋极化 自旋弛豫 

分 类 号：O484[理学—固体物理]