电阻场板LDMOS表面电场解析模型及优化设计  

An Analytical Model of the Surface Electrical Field Distributions of RFP LDMOS and Its Optimum Design

作　　者：李琦[1] 李肇基[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《固体电子学研究与进展》2008年第2期185-189,共5页Research & Progress of SSE

摘　　要：提出具有电阻场板(Resistive field plate,RFP)硅基LDMOS表面电场和击穿电压解析模型。基于求解二维Poisson方程,此模型给出了二维表面电场和电势与器件结构参数和漏偏压关系的解析表达式;计算漂移区长度与击穿电压的关系,提出了一种优化高压器件的有效方法。解析结果与用MEDICI模拟的数值结果吻合较好,验证了模型的准确性,该模型可用于体硅RFPLDMOS的设计优化。In this paper, an analytical model for the surface electrical field and potential distributions of RFP LDMOS is presented. Based on the 2-D Poisson^s solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias; the dependence is calculated. An effectual way to gain the optimum of breakdown voltage on drift region length high-voltage devices is also proposed. Analytical results are well verified by simulation results obtained by MEDICI, showing the validity of the model presented here. This analysis model is a powerful tool for the device engineers to provide accurate first-order design schemes and physical insights into the bulk-silicon RFP LDMOS.

关 键 词：电阻场板 表面电场 击穿电压 模型 

分 类 号：TN322.8[电子电信—物理电子学] TN432