GaSb/InGaAsSb量子阱的带间跃迁设计  

Interband transition design of GaSb/InGaAsSb quantum wells

作　　者：刘盛[1] 张永刚[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室

出　　处：《功能材料与器件学报》2008年第3期614-618,共5页Journal of Functional Materials and Devices

基　　金：国家"863"计划资助项目(No.2002AA313040);国家"973"计划资助项目(No.G20000683);国家自然科学基金重点资助项目(No.60136010)

摘　　要：采用一维方势阱模型对GaSb/InxGa1-xAs0.02Sb0.98m量子阱激光器结构的子带跃迁波长与阱宽间的关系进行了计算,并采用能量平衡模型计算了此应变材料体系在生长时的临界厚度。结果表明GaSb/InGaAsSb是制作2-3μm中红外波段量子阱激光器的良好材料体系,在结构设计和材料生长中采用合适的材料组分及阱宽并对应变总量进行控制是十分重要的。The interband transition of GaSb/InxGa1-xAs0.02Sb0.98m quantum well structure has been calculated by using one dimensional rectangular quantum well model.The critical layer thickness of this material system has also been calculated based on energy balance model.It is shown that GaSb/InGaAsSb is a suitable material system for 2-3μm mid-infrared quantum well lasers.It is very important to adopt suitable composition and well width,and to control the total amount of strain in the structure design and material growth.

关 键 词：量子阱结构 半导体激光器 带间跃迁 

分 类 号：TN248.4[电子电信—物理电子学]