SiO_2气凝胶薄膜的介电性能  

Dielectric Properties of Silica Aerogel Films

作　　者：王娟[1] 陈玲[1] 徐建国[1] 冯坚[2] 

机构地区：[1]武汉军械士官学校弹药导弹系,湖北武汉430075 [2]国防科学技术大学航天与材料工程学院新型陶瓷纤维及其复合材料国防科技重点实验室,湖南长沙410073

出　　处：《新技术新工艺》2008年第6期91-93,共3页New Technology & New Process

基　　金：武器装备预研项目(41312040307)

摘　　要：采用MIS结构测量了SiO2气凝胶薄膜的介电性能,其介电常数可低于2.5。验正了薄膜的介电常数与孔洞率或折射率的计算公式;探讨了SiO2气凝胶薄膜的介电色散行为和介电极化机制,指出了薄膜的低介电常数是其纳米多孔结构和疏水性能共同作用的结果。The dielectric properties of silica aerogel films were measured by metal/insulator/semiconductor (MIS) structure. The dielectric constant can be reduced to below 2.5. An empirical formula on dielectric constant and refractive index of silica aerogel film was acquired. Molecule polarization theory is introduced to interpret partially dispersive low dielectric constant. It is find that the low dielectric constant of silica aerogel film is the results of its high porosity and hydrophobic character.

关 键 词：SiO2气凝胶薄膜 低介电常数 介电性能 折射率 

分 类 号：TQ127.2[化学工程—无机化工]