基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计  

An optimized design of the XIL beam splitter grating combining advanced silicon etching with silicon oxidation technology

作　　者：朱伟忠[1] 吴衍青[1] 史沛熊 郭智[1] 邰仁忠[1] 徐洪杰[1] 

机构地区：[1]中国科学院上海应用物理研究所,上海201800 [2]丹麦科技大学,哥本哈根2800

出　　处：《核技术》2008年第6期415-419,共5页Nuclear Techniques

摘　　要：基于严格的矢量耦合波方法,对13.4nm(92.5eV)软X射线正入射于周期140nm的Si光栅和SiO2光栅的一级衍射效率进行了模拟计算,结果表明SiO2光栅的最大一级衍射效率远比Si光栅高,同时也比目前用于13.4nm软X射线干涉光刻的Cr/Si3N4复合光栅高。本文提出用高级硅刻蚀工艺和硅氧化工艺制作深高宽比纳米级SiO2光栅的新方法,可以解决直接刻蚀制作此光栅难度大的问题,适用于制作上海光源(SSRF)软X射线干涉光刻分束光栅。In this paper, diffraction efficiency of SiO2 gratings was calculated based on the rigorous coupled-wave analysis, with normal incidence of a 13.4 nm （92.5 eV） EUV light on a grating of 140 nm period. It was found that the maximal first order diffraction efficiency of the SiO2 grating was much higher than the Si grating, and higher than the Cr/Si3N4 compound gratings currently used at PSI. A new method, which combines advanced silicon etching with silicon oxidation technology, was employed to make the SiO2 nano-grating with high aspect ratio. This method, for making the beam splitter grating especially, solves the problem of direct SlOE etching and will be used for the soft X-ray interference lithography endstation at SSRF.

关 键 词：软X射线透射光栅 衍射效率 高级硅刻蚀 硅氧化工艺 严格耦合波方法 软X射线干涉光刻 

分 类 号：O436.1[机械工程—光学工程]