Si_3N_4/SiO_2 栅 pH-ISFET 传感器的设计与模型  

Design and Modelling of Si_3N_4/SiO_2 Gate pHISFET Sensor

作　　者：丁辛芳[1] 

机构地区：[1]东南大学微电子中心

出　　处：《东南大学学报（自然科学版）》1997年第6期103-108,共6页Journal of Southeast University：Natural Science Edition

摘　　要：提出了一种含微参比电极和择优差分补偿单元的背面引线ｐＨ－ＩＳＦＥＴ传感器的新结构，实现了敏感元和信号处理电路的完全隔离；基于ＳＤＢ／ＳＯＩ材料和硅微机械加工技术，研制成了集成ｐＨ－ＩＳＦＥＴ传感器；讨论了含两种类型表面基的Ｓｉ３Ｎ４／ＳｉＯ２绝缘栅中硅醇基与胺基所占比率对Ｓｉ３Ｎ４／ＳｉＯ２栅ｐＨ－ＩＳＦＥＴ的敏感性能和稳定性的影响．对进一步改善ｐＨ－ＩＳＦＥＴ的敏感性能提供了一种实际的考虑．A novel structural pHISFET sensor based on backside contacts is proposed. A selective differential element and microreference electrode were integrated on the same chip. The structure realizes the complete isolation of the sensitive elements from the signal processing circuits. By using SDB/SOI material and the micromechanical techniques, an integrated pHISFET sensor is developed. The effect of the Si3N4/SiO2 insulator gate which contains two types of surfacesites and ratio of silanol site to amine site on sensitivity and stability of Si3N4/SiO2 gate pHISFET is also discussed, and it is useful for improving sensitive characteristic of pHISFET.

关 键 词：PH-ISFET 传感器 表面基 敏感特性 化学传感器 

分 类 号：TP386.7[自动化与计算机技术—计算机系统结构] O657.1[自动化与计算机技术—计算机科学与技术]