高频感应加热法制备 SrTiO_3 BLC 半导瓷  

Preparation of SrTiO_3 Based Semiconductive Ceramics by High Frequency Induction Heating Device

作　　者：陈章其[1] 汪云华[1] 吴冲若[1] 

机构地区：[1]东南大学电子工程系

出　　处：《东南大学学报（自然科学版）》1997年第6期118-122,共5页Journal of Southeast University：Natural Science Edition

摘　　要：采用真空高频感应加热法制备ＳｒＴｉＯ３晶界层电容器半导瓷，研究了掺杂材料、掺杂量、烧结温度、保温时间、成型密度等对半导瓷性能结构的影响．所制备的半导瓷经二次烧结成的ＳｒＴｉＯ３ＢＬＣ，其视在介电常数Ｋｅｆｆ＞３×１０４，损耗角正切ｔａｎδ≈１０－２，绝缘电阻率ρ＞１０１０Ω·ｃｍ．Semiconductive ceramics of SrTiO_3 based grain boundary barrier layer capacitor were prepared by high frequency induction heating device. The effects of doping materials and amounts, sintering temperature, soaking time, and compaction density on properties and construction of SrTiO_3 based semiconductive ceramics were investigated in this condition. After second firing, SrTiO_3 based BLC with k eff >3×10 4, tan δ ≈10 -2 , ρ >10 10 Ω·cm was achieved.

关 键 词：半导体陶瓷 晶界层电容器 高频感应加热法 

分 类 号：TQ174.756[化学工程—陶瓷工业]