n型硅微尖场发射电子能谱的模拟计算  

Simulation of Electron Energy Distribution of n-type Si Emitter

作　　者：元光[1] 曹崇龙[1] 宋翠华[1] 宋航[2] 屿拹秀隆[3] 三村秀典[3] 

机构地区：[1]中国海洋大学物理系,山东青岛266100 [2]中国科学院激发态物理重点实验室,吉林长春130033 [3]日本静冈大学电子工学研究所,日本滨松

出　　处：《发光学报》2008年第3期557-560,共4页Chinese Journal of Luminescence

基　　金：国家“973”计划资助项目(2003CB314702)

摘　　要：结合金属的场发射电子能谱,模拟计算了场渗透对n型半导体硅微尖的场发射能谱的影响,并与n型硅微尖的场发射能谱实验结果进行了比较,讨论了模拟计算误差的来源。计算结果表明电场渗透现象导致硅的场发射能谱向低能方向偏移,表面电场越高,能谱的偏移量越大,其偏移程度可超过1eV。导致硅微尖的场发射能谱偏移的主要因素是半导体的场渗透现象。The electron energy distribution of n-type silicon tips （EED/n-Si） is simulated as a function of gate bias and compared with experimental results. The simulation is based on the theory of electron energy distribution of metals （EED/M） taking account of the penetration of electric field into semiconductor. The calculated results showed the electron energy of EED/n-Si will shift to low energy with penetration of electric field, higher the gate bias or the electric field on surface and more shift of the electron energy of （EED/n-Si） to low energy. The shift could be over 1.5 eV according to gate bias. The penetration of electric field into the n-Si is predominant in the shift of electron energy of EED/n-Si.

关 键 词：场发射 电子能谱 硅微尖 电场渗透 

分 类 号：O462.4[理学—电子物理学] TN873.95[理学—物理]