低温沉积Cu(InxGa1-x)Se2薄膜  

Low Temperature Deposition of Cu(In_xGa_(1-x))Se_2 Thin Films

作　　者：肖健平[1] 何青[2] 陈亦鲜[1] 夏明[1] 

机构地区：[1]西南民族大学电气信息工程学院,成都610041 [2]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《科技导报》2008年第11期53-55,共3页Science & Technology Review

摘　　要：采用多元共蒸发工艺,在Mo覆盖的碱石灰玻璃上沉积Cu(In_xGa_(1-x))Se_2薄膜。利用X射线衍射仪、霍尔测试仪研究了Cu(In_xGa_(1-x))Se_2薄膜的晶体结构、导电性质,探讨了低温沉积过程中衬底温度与薄膜结构特性、电学特性的关系。测试结果表明,衬底温度对掺杂程度、晶相单一性、晶粒尺寸、电阻率有重要影响。衬底温度低于500℃时,CIGS材料性能会出现明显劣化。Cu（InxGa1-x）Se2 thin films were deposited on molybdenum coated SLG by multi-source evaporation. The crystal structure and electrical properties of the CIGS films were analyzed by X-ray diffraction and Hall measurement. The effect of substrate temperature on film structure is analyzed. The results show that substrate temperature affects Ga-doping, secondary phase, grain size and resistivity. The properties of CIGS films degrade significantly when substrate temperature is below 500℃.

关 键 词：低温沉积 Cu(InxGa1-x)Se2 结构特性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]