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出 处:《半导体技术》2008年第7期596-599,共4页Semiconductor Technology
基 金:广西高校百名中青年学科带头人资助计划项目(桂教人[2004]76号)
摘 要:研究了吸收因子与GaAs光导开关输出电压幅值的关系。考虑了开关电场对吸收系数的影响,导出了输出电压与吸收因子之间的函数关系式。在不同波长、间隙宽度、触发光脉冲能量条件下进行理论仿真,并与没有考虑吸收因子的情况相比,研究结果表明吸收因子对光导开关的输出电压幅值有重要影响,吸收因子减小了光导开关的输出电压幅值,延长了输出电压达到饱和状态的时间,增大了开关饱和触发光脉冲能量。在实际应用中应该对光导开关的吸收特性加以考虑。The effect of the absorption factor on the output voltage across the load in GaAs photoconductive switches was studied, considering the effect of the field across the 'switch on the absorption coefficient. The function expression between the output voltage and absorption factor was derived. Theoretic simulations were based on different wavelengths, gap length and optical pulse energy, compared with the absorption factor unconsidering. The results show that the absorption factor has great effect on the output voltage. The absorption factor reduces the output voltage, extends the saturation time, and increases the saturation energy of the GaAs PCSS' s. The effect of absorption characteristics in the photoconductive switches should be considered in the application.
分 类 号:TN36[电子电信—物理电子学]
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