InGaAs/InP材料的Zn扩散技术  

Zn Diffusion of InGaAs/InP Materials

作　　者：刘英斌[1] 陈宏泰[1] 林琳[1] 杨红伟[1] 郑晓光[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第7期610-612,共3页Semiconductor Technology

摘　　要：使用MOCVD反应室进行了InGaAs和InP材料上的Zn扩散工艺条件研究。通过控制扩散温度、扩散源浓度和扩散时间三个主要工艺参数,研究了InGaAs/InP材料的扩散系数和扩散规律,获得了优化的扩散条件。试验表明,该扩散工艺符合原子扩散规律,扩散现象可以用填隙-替位模型解释。样品经过快速退火过程,获得了极高的空穴浓度。InP的空穴浓度达到7.7×1018/cm3,而InGaAs材料达到7×1019/cm3。在优化的扩散条件下,Zn扩散的深度和浓度精确可控,材料的均匀性好,工艺重复性好,能够应用于光电探测器或其他器件。The Zn diffusion technology of InGaAs and InP materials was investigated inside MOCVD reactor. The diffusion coefficient and the diffusion principle were studied by control three main conditions of diffusion： the diffusion temperature, the concentration of diffusion source, the diffusion time. The optimum diffusion conditions were obtained. The Zn diffusion experiment inside MOCVD reactor can be explained by the substitutional-interstitial model. The hole concentration was measured by electro-chemical C-V after annealing. Very high hole concentration were obtained： 7.7× 10^18/cm^3 for InP and 7 × 10^19/cm^3 for InGaAs. The Zn diffusion technique in MOCVD reactor had several advantages such as the easy controlling, good uniformity and reproducibility. It could be used in the production of photo detector and other devices.

关 键 词：金属有机化学气相淀积 锌扩散 退火 电化学C-V 光电探测器 

分 类 号：TN305.4[电子电信—物理电子学]