等离子体化学气相沉积制备氮化碳薄膜  

Preparation of Carbon Nitride Thin Films by Plasma Chemical Vapor Deposition

作　　者：唐见波[1] 石玉龙[1] 

机构地区：[1]青岛科技大学材料科学与工程学院,山东青岛266042

出　　处：《青岛科技大学学报（自然科学版）》2008年第3期246-249,252,共5页Journal of Qingdao University of Science and Technology:Natural Science Edition

摘　　要：以H2、N2和CH4气体为前驱气体,通过等离子体化学气相沉积技术制备氮化碳薄膜。采用场发射扫描电子显微镜(FS-EM)及其附带的能量分散电子谱(EDS)、X射线衍射分析(XRD)、红外光谱(FTIR)和拉曼光谱(Raman)对其结构、表面形貌、元素含量和成键状况进行了分析,并讨论了气体流量比和放电功率对薄膜制备的影响。实验结果表明:沉积的薄膜中含有晶态的C3N4,碳氮原子比接近于理论值0.75,样品中碳氮原子多以C N、C N的形式存在;样品中氮元素的含量随着反应气体中N2含量的增加而增加;放电功率的增大使薄膜的沉积速率增大。Carbon nitride films were deposited by plasma chemical vapor deposition （PCVD） using hydrogen, nitrogen and methane as precursors. The films were characterized by filed emission scanning electron microscopy （FE-SEM）, energy dispersive X- ray spectroscopy （EDS）, X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FTIR） and Raman spectroscopy. The effects of gas flow ratio and discharge power on the growth of the films have been discussed. The results showed that there was crystalline carbon nitride formed in the films, with ratio of carbon to nitrogen close to 0.75 and most of the chemical bonds being C = N, C=N. The deposition rate increased as with increasing the discharge power. The nitrogen content in the films increased with increase of the ratio of nitrogen to carbon.

关 键 词：氮化碳 等离子体 化学气相沉积 

分 类 号：TG333[金属学及工艺—金属压力加工]