薄膜厚度对直流脉冲磁控溅射Mo薄膜光电性能的影响  

Effects of thickness on optical and electrical properties of Mo films prepared by DC-PMS

作　　者：朱继国[1] 柴卫平[1] 王华林[1] 张树旺[1] 刘世民[1] 张粲[1] 汪亚辉[1] 

机构地区：[1]大连交通大学材料科学与工程学院,光电材料与器件研究所,辽宁大连116028

出　　处：《光学仪器》2008年第3期55-59,共5页Optical Instruments

基　　金：大连交通大学人才引进启动基金资助项目(021403)

摘　　要：采用直流脉冲磁控溅射方法在SLG衬底上沉积CIGS太阳电池背接触Mo薄膜，研究了薄膜的光学和电学性能随厚度的变化关系。结果表明，随着薄膜厚度的增加，薄膜的电阻率先降低后增加，在厚度284．3nm处电阻率最低，为7．3×10^-4Ω·cm。不同厚度的Mo薄膜在各个波长处（200～840nm）反射率都随波长的增加而增大。随着薄膜厚度的增加，平均反射率总的呈下降趋势，在薄膜厚度284．3nm时出现一反射率高峰，其在200-840nm波长范围内的平均反射率达43．33％。CIGS solar cell back contact Mo films were deposited on the soda-lime glass （SLG） substrates by direct current pulse magnetron sputtering （DC-PMS）. The optical and electrical properties of the Mo films were studied for different thickness. The results show that the resistivity of Mo films first decreases then increases with the increase of film thickness. The lowest resistivity of Mo film with the thickness of 284.3nm obtained in this study is 7.3 × 10^-4 Ω·cm. The reflectivity of films for different thickness increases with the increase of wavelength. The average reflectivity of films decreases with the increase of thickness and has a pinnacle of reflectivity with the thickness of 284.3nm, the average reflectivity of the film reaches 43. 33% in the range of 200-840nm of wavelength.

关 键 词：MO薄膜 直流脉冲磁控溅射(DC-PMS) 电阻率 反射率 

分 类 号：O484[理学—固体物理]