离子注入C_(60)薄膜的电导率变化  

Electric conductivity change of ion-implanted C 60 films

作　　者：张建国[1] 崔云龙[1] 巩金龙[1] 林森浩[1] 荣廷文[1] 

机构地区：[1]中国科学院上海原子核研究所

出　　处：《核技术》1997年第6期333-337,共5页Nuclear Techniques

摘　　要：沉积在云母片上的纯Ｃ６０薄膜受２０ｋｅＶ的Ｌｉ＋和Ｎ＋２离子轰击，剂量在０．５×１０１６／ｃｍ２～５．０×１０１６／ｃｍ２之间改变，测量了离子注入后Ｃ６０薄膜方块电阻随温度的变化，进而推导出Ｃ６０薄膜电导率随温度和注入离子剂量的变化；分析了非原位测量中氧元素对电导率变化的影响以及能量较高的注入离子对Ｃ６０薄膜的辐照损伤效应。研究结果表明，Ｌｉ＋注入对Ｃ６０薄膜电导率的影响明显高于Ｎ＋２注入的影响，并给出了不同离子注入条件下Ｃ６０薄膜电导率随温度变化的函数关系式。Pristine C 60 films sublimed onto sheel mica were implanted with 20keV Li + ions and N + 2 ions, respectively, at doses from 0 5×10 16 /cm 2 to 5 0×10 16 /cm 2 The change of electric conductivity with temperature of the films was measured. The effects of oxygen and irradiation damage on the films were analysed. It is shown that the impact of Li + ions is more obvious than that of N + 2 ions, and a functional relation between electric conductivity and temperature is given for C 60 films ion-implanted on different conditions.

关 键 词：C_60薄膜 电导率 离子注入 

分 类 号：O484.42[理学—固体物理] TN204[理学—物理]