用显微拉曼扫描成象(mapping)法测集成电路中CoSi_2电极引起的应力  

Stress Induced by CoSi 2 Grown on Polycrystalline Si Measured By Micro Raman Spectroscopy

作　　者：李碧波[1] 黄福敏[1] 张树霖[1] 高玉芝[2] 张利春[2] 

机构地区：[1]北京大学物理系 [2]北京大学微电子所

出　　处：《光散射学报》1997年第2期202-204,共3页The Journal of Light Scattering

摘　　要：用显微拉曼扫描成象（ｍａｐｐｉｎｇ）法测集成电路中ＣｏＳｉ２电极引起的应力李碧波黄福敏张树霖（北京大学物理系北京１００８７１高玉芝张利春（北京大学微电子所北京１００８７１）ＳｔｒｅｓＩｎｄｕｃｅｄｂｙＣｏＳｉ２ＧｒｏｗｎｏｎＰｏｌｙｃｒｙｓｔａｌｉｎ...Abstract We have studied the stress in polycrystalline silicon due to CoSi 2 in the scale of μm by micro Raman spectroscopy. We found that the stress induced by CoSi 2 grown on the polycrystalline Si substrate was compressive stress. Relations between the magnitudes of the stress and the areas of the CoSi 2 films were studied. It was found that CoSi 2 film causes larger stress with smaller dimension. We also found that the stress on the boundary of the CoSi 2 film is of a different type to that at the center of the film, with twice the absolute magnitude of that at the center.

关 键 词：集成电路 显微拉曼扫描 应力 钴硅化合物 电极 

分 类 号：TN407[电子电信—微电子学与固体电子学]