衬底温度对SnS薄膜性能的影响  

Influence of Substrate Temperature on Properties of Tin Sulfide Thin Films

作　　者：郭余英[1] 史伟民[1] 魏光普[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《人工晶体学报》2008年第3期666-669,647,共5页Journal of Synthetic Crystals

基　　金：上海市科委重点项目(No.03DZ12033);上海市重点学科资助(T0101);SHU SOLARE R&D研究项目

摘　　要：采用真空蒸发法在玻璃衬底上沉积硫化亚锡(SnS)薄膜,并对不同衬底温度沉积的薄膜性能进行了探讨。对薄膜的结构、表面形貌、成份、电学特性和光学特性进行了表征。实验发现,最佳的衬底温度为150℃;制备的SnS薄膜为多晶的斜方晶系,晶粒大小约为0.5μm,Sn和S元素的化学计量比接近1,导电类型为P型,暗电导率、光电导率分别为0.01Ω-1.cm-1和0.08Ω-1.cm-1,禁带宽度为1.402eV。Thin films of tin sulfide（SnS）have been deposited by vacuum evaporation at different substrate temperatures.The samples have been characterized with XRD and SEM for structural analysis.The electrical and optical properties of SnS thin films have been investigated also.From the results,150 ℃ was the best substrate temperature.When the substrate temperature was 150 ℃,the SnS thin films was orthorhombic structure with crystallite size of 0.5 μm and the ratio of Sn to S is about 1.Hot probe method showed p-type nature for the deposited films.Dark-conductivity and photo-conductivity were 0.01 Ω^-1·cm^-1 and 0.08 Ω^-1·cm^-1,respectively.The optical energy band gap of the films was 1.402 eV.

关 键 词：太阳能电池 硫化亚锡薄膜 真空蒸发 衬底温度 

分 类 号：TN304[电子电信—物理电子学]