石墨表面CVD SiC涂层微观结构研究  

Microstructure Study of the SiC Coatings on Graphite by CVD

作　　者：黄浩[1] 陈大明[1] 仝建峰[1] 李宝伟[1] 

机构地区：[1]北京航空材料研究院先进复合材料国防科技重点实验室,北京100095

出　　处：《航空材料学报》2008年第2期50-54,共5页Journal of Aeronautical Materials

摘　　要：研究CH3SiCl3-H2-Ar体系中在石墨表面化学气相沉积SiC涂层工艺,并对涂层形貌进行SEM分析。考察沉积温度、气体比例、气体流量以及稀释气体含量对化学气相沉积SiC涂层的显微结构的影响。结果表明,在温度1100℃,H2∶MTS=5∶3,气体流量8L/min,稀释气体1L/min时,制备的涂层致密光滑。其中涂层的形貌对温度最敏感,当沉积温度达到1100℃时,CVD SiC涂层表面致密且光滑。The SiC coating by CVD process on graphite was studied by scanning electron microscope（SEM） in CH3SiCl3-H2-Ar system. The influence of temperature, the proportion and flow rate of carrier gas and dilute gas on the microstructure of CVD SiC coating were investigated. The experimental results show that the optimum condition for the SiC coating are at 1100℃ , H2： MTS = 5： 3, total gas flow rates 8L/min,diluent flow rates 1L/min. A dense and smooth coating will be obtained. The reaction temperature is the most sensitive factor to the morphology of coatings. The CVD SiC coatings are dense and smooth at the reaction temperatures at 1100℃.

关 键 词：化学气相沉积 SIC涂层 

分 类 号：TG232[金属学及工艺—铸造]