蚀刻设备的现状与发展趋势  

The Existing State and Development Trend of Etcher

作　　者：童志义[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京东燕郊101601

出　　处：《电子工业专用设备》2008年第6期3-9,共7页Equipment for Electronic Products Manufacturing

摘　　要：概述了蚀刻技术与设备的现状,针对32nm技术节点器件制程对蚀刻设备在双重图形蚀刻、高k/金属栅材料、金属硬掩膜及进入后摩尔时代三维封装的通孔硅技术(TSV)方面挑战,介绍了蚀刻设备的发展趋势。The present situation of etch technique and equipment is summarized, against the challenge to etcher for 32 nm technology node device process with dual pattern etching, high k/metal gate material, metal hard mask and 3D-IC package TSV technique which enter into post -Moore Era, the development trend of etch equipment is introduced in this paper.

关 键 词：蚀刻设备 32nm节点 双重图形蚀刻 高k/金属栅材料 金属硬掩膜 通孔硅技术 

分 类 号：TN305.7[电子电信—物理电子学]