硫化时间对FeS_2薄膜结构和性能的影响  

Influence of sulfuration time on the structure and properties of FeS_2 films

作　　者：吴新坤[1] 钟南保[1] 程树英[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《福州大学学报（自然科学版）》2008年第3期374-377,共4页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省自然科学基金资助项目(2006J0032;T0650008);福建省科技三项资助项目(2006F5062);福州大学科技发展基金资助项目(2005-XY-14)

摘　　要：在硫化温度为653 K和硫化时间分别在3、6和12 h的条件下,用硫化铁膜法制备FeS2薄膜.通过对不同条件下制备的薄膜成分、结构和光电性能研究表明：当硫化时间大于6 h时,薄膜的成分接近理想化学配比,直接光学能带间隙大约为1.15-1.17 eV,电阻率约为1.3Ω.cm.FeS2 films were prepared by sulfurizating Fe films at temperature of 653 K and time of 3, 6 and 12 hours. The composition, structure, electrical and optical properties of the films were investiga-ted. It is indicated that the composition of the films is close to stoichiometric, its direct bandgap is about 1.15- 1.17 eV and its resistivity is around 1.31Ω·cm when the sulfurization time is greater than 6h.

关 键 词：FES2薄膜 硫化时间 制备 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN405[电子电信—微电子学与固体电子学]