可变占空比的双脉冲电源在铜铟镓硒预置层制备中的应用  

Application of dipulse power supply with variable duty ratio to the preparation of predeposited layer of CIGS thin films

作　　者：刘戈[1] 李凤岩[1] 刘一鸣[1] 于涛[1] 孙云[1] 

机构地区：[1]南开大学光电子研究所天津市光电子薄膜与器件重点实验室,天津300071

出　　处：《真空》2008年第4期87-89,共3页Vacuum

基　　金：天津重大攻关;创新资金(合同号:06FZZD9X1200);863课题(项目号:2004AA513020)。

摘　　要：用交替溅射的方法制备铜铟镓硒薄膜太阳能电池预置层。通过可变占空比的电源控制器实现对Cu/Ga合金靶以及In靶溅射时间的控制,进而实现对最后元素配比的控制。实验中发现,在一个溅射周期中,Cu/Ga合金靶溅射时间对最后成分影响最大,其次是In靶溅射时间,非溅射时间的长短对成分也有影响。交替溅射制备的铜铟镓硒预置层经过XRD检测,合金相主要为Cu11In9。The predeposlted metallic layer was prepared by the two-target alternating magnetron sprttering process for GIGS thin-film solar cell, where the sputtering time for Cu/Ga alloy target and for In target was controlled separately through a power supply controller of which the duty ratio is variable, thus controlling eventually the proportion of different chemical elements. Testing results showed that in a sputtering cycle the sputtering time for Cu/Ga target has greatest effect on the final element distribution and that for In target is the next. In addition, the non-sputttering time also affects the element distribution to a certain degree. XRD patterns of the predeposited layer thus prepared reveal that in the alloy phase the majority is Culling.

关 键 词：铜铟镓硒 溅射 SPIK-2000A 

分 类 号：TB43[一般工业技术] O614.37[理学—无机化学]