一种XeF_2对硅的脉冲自发刻蚀  

A spontaneous pulse etching of silicon with XeF_2

作　　者：尉伟[1] 王勇[1] 吴晓伟[2] 范乐[1] 付绍军[1] 王建平[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029 [2]中国科学技术大学量子信息重点实验室,安徽合肥230027

出　　处：《真空》2008年第4期93-95,共3页Vacuum

摘　　要：XeF2不需要任何电离作用,与硅可发生自发反应,可用作对硅各向同性干法刻蚀。研制了一个使用脉冲法对二氧化硅/硅体系进行XeF2刻蚀的系统,利用该系统实现了高SiO2/Si、光刻胶/Si刻蚀选择比之硅刻蚀,并对刻蚀速率与刻蚀压强、刻蚀表面粗糙度与刻蚀深度之间的关系进行实验研究。XeF： can react directly with silicon spontaneously without ionization required, so it can be used as the gas for isotropic dry etching of silicon. An XeF： pulse etching system was developed with simple structure and easy operation to perform the Si etching, by which the high ratios of SiO： to Si and photoresist to silicon can both be selected to realize such an etching. The relationships between etching pressure and etching rate and between surface roughness and etching depth were investigated experimentally.

关 键 词：XEF2 各向同性干法刻蚀 自发硅刻蚀 脉冲刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]