Zn_(1-x)Co_xO稀磁半导体薄膜的结构及其磁性研究  

Structure and magnetic properties of Zn_(1-x)Co_xO thin film

作　　者：吴文清[1] 史同飞[1] 张国斌[1] 符义兵[1] 潘志云[1] 孙治湖[1] 闫文盛[1] 徐彭寿[1] 韦世强[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《物理学报》2008年第7期4328-4333,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10575099;10635060;10605024)资助的课题~~

摘　　要：利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn1-xCoxO(x=0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn1-xCoxO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn1-xCoxO稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn1-xCoxO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn1-xCoxO产生室温铁磁性的主要原因.Zn1- xCxO （x = 0.01, 0.02） dilute magnetic semiconductor thin films deposited on Si （001） substrates at 650℃ by pulsed laser deposition method were studied by X-ray absorption fine structure, X-ray diffraction and magnetic measurement. The typical ferromagnetic hysteresis curves were obtained by superconducting quantum interference device magnetometry at room temperature. The X-ray diffraction results showed that Zn1-x Cox O films were of the wurtzite structure. The X-ray absorption fine structure results revealed that the Co atoms were incorporated into the ZnO lattice and located at the substitutional Zn sites, and a homogeneous phase of Zn1-x Cox O was formed. Comparing the experimental curves with the theoretical calculation results, the additional peak C was assigned to the oxygen vacancies, which indicated that the ferromagnetism of Zn1-xCoxO films was strongly correlated with the existence of oxygen vacancies.

关 键 词：Zn1-xCoxO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法 

分 类 号：O484.43[理学—固体物理]