铟组分不同的InGaN材料的光致发光特性  

Optical Study of InGaN Materials with Different Indium Content

作　　者：郑大宇[1] 孙元平[1] 王莉莉[2] 张书明[2] 杨辉[2] 

机构地区：[1]烟台大学光电信息科学技术学院,山东烟台264005 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《烟台大学学报（自然科学与工程版）》2008年第3期181-184,共4页Journal of Yantai University(Natural Science and Engineering Edition)

基　　金：山东省优秀中青年科学家奖励基金资助项目(2006BS01240)

摘　　要：利用光致发光谱研究了不同组分铟镓氮材料的光学特性.发现随着温度升高,2个样品的主峰表现出一种行为:半高宽度(FWHM)增加时,主峰位置红移;半高宽度减少时,主峰位置蓝移.对所得数据进行Arrhenius拟合,比较激活能得出结论:样品B中的非辐射复合中心比样品A中的易被激活;样品B中的载流子逃逸效应比样品A中更为明显.从而解释了2个样品发光效率不同的原因,为样品的改良提供了理论依据.Optical properties of InGaN materials with different indium content are systematically studied by photoluminescence （PL）. There exist red-shift temperature dependence of the peak energy for InGaN-related PL with increasing full width at half maximum （FWHM） and a blue-shift with decreasing FWHM. The activa- tion energies are obtained from the Arrhenius plot, The results suggest that the nonradiative recombination centers of sample B are easier to activate than those of sample A, and the carrier-escaping effect in sample B is more prominent than that in sample A. Therefore, the reason why the sample with high indium content shows low luminescence efficiency is explained, which provides academic foundation for sample improvement.

关 键 词：铟镓氮(InGaN) 光致发光 半高宽度 激活能 

分 类 号：O469[理学—凝聚态物理]