PHEMT器件界面态分析方法综述  

Interface State Analysis Method of PHEMT

作　　者：张鹏[1] 黄云[2] 李斌[1] 

机构地区：[1]华南理工大学物理科学与技术学院,广东广州510641 [2]信息产业部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2008年第3期20-23,共4页Electronic Product Reliability and Environmental Testing

摘　　要：介绍了高电子迁移率场效应晶体管(PHEMT)器件的结构,并主要从直流特性、击穿电压和栅延时等方面研究了界面态对PHEMT器件的影响,总结了界面态分析方法,包括:通过沟道峰值电场和碰撞电离率来研究界面态的密度;二维量子模型模拟法的应用;根据跨导随频率变化的规律来测量界面态的密度。The structure of PHEMT is described. The effect of the interface state on a PHEMT is presented primarily interms of the DC characteristics, breakdown voltage and gate-delay. Some analysis methods are also introduced, including the relation between the impact ionization and the max electric field; the simulation based on the 2D quanta model; and the internal trans- conductance （gm） frequency dispersion.

关 键 词：高电子迁移率场效应晶体管 砷化镓器件 界面态 

分 类 号：TN386[电子电信—物理电子学]