FTIR法研究BCN薄膜的内应力  

FTIR Spectroscopic Studies of Inner Stress on Boron Carbon Nitride Thin Films

作　　者：王玉新[1] 郑亚茹[1] 宋哲[1] 冯克成[2] 赵永年[3] 

机构地区：[1]辽宁师范大学物理系,辽宁大连116029 [2]长春理工大学理学院,吉林长春130022 [3]吉林大学超硬材料国家重点实验室,吉林长春130021

出　　处：《光谱学与光谱分析》2008年第7期1526-1529,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(59831340);大连市科学技术基金项目(2007J23JH029)资助

摘　　要：采用射频磁控溅射技术，用六角氮化硼和石墨为溅射靶，以氩气（Ar）和氮气（N2）为工作气体，在Si（100）衬底上制备出硼碳氮（BCN）薄膜。利用傅里叶变换红外光谱（FTIR）考察了不同沉积参数（溅射功率为80～130W、衬底温度为300-500℃、沉积时间为1～4h）条件下制备的薄膜样品。实验结果表明，所制备薄膜均实现了原子级化合。并且沉积参数对BCN薄膜的生长和内应力有很大影响，适当改变沉积参数能有效释放BCN薄膜的内应力。在固定其他条件只改变一个沉积参数的情况下，得到制备具有较小内应力的硼碳氮薄膜的最佳沉积条件：溅射功率为80W、衬底温度为400℃、沉积时间为2h。Boron carbon nitride thin films were deposited by radio frequency （RF） magnetron sputtering technique using a 50 mm-diameter composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The composite target was composed of two semi disks： one of h-BN and the other one of graphite. The distance between the target and the substrate was kept at 50 mm. The chamber base pressure was below 5× 10^-4 Pa. During the deposition, the mixture of Ar （80%） and N2 （20%） was injected into the vacuum chamber and the total pressure was 1.3 Pa. The films were grown on silicon substrates at different deposition parameters, including sputtering power of 80-130 W, deposition temperature of 300-500 ℃ and deposition time of 1-4 h. The chemical bonding state of the samples Was characterized by Fourier transform infrared absorption spectroscopy （FTIR）. The results suggested that all of the films deposited at these deposition parameters are atomic-level hybrids composed of B, C and N atoms. Besides BN and carbons bonds, the boron carbide and carbon nitride bonds were formed in the BCN thin films. And the deposition parameters have important influences on the growth and inner stress of BCN thin films. That is the higher the sputtering power, the larger the inner stress; the higher or lower the deposition temperature, the larger the inner stress; the longer the deposition time, the larger the inner stress. So changing deposition parameters properly is a feasible method to relax the inner stress between the films and substrate. In the conditions of changing one parameter each time, the optimum deposition parameters to prepare BCN thin films with lower inner stress were obtained： sputtering power of 80 W, deposition temperature of 400 ℃ and deposition time of 2 h.

关 键 词：射频磁控溅射 硼碳氮薄膜 傅里叶变换红外光谱 内应力 

分 类 号：O484.1[理学—固体物理]