Preparation of SiC_p/Cu composites by Ti-activated pressureless infiltration  

作　　者：章林 曲选辉 段柏华 何新波 秦明礼 路新 

机构地区：[1]State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《中国有色金属学会会刊：英文版》2008年第4期872-878,共7页Transactions of Nonferrous Metals Society of China

基　　金：Project(2006AA03Z557) supported by The High-tech Research and Development Program of China;Project(2006CB605207) supported by the National Basic Research Program of China;Project(I2P407) supported by MOE Program For Changjiang Scholars and Innovative Research Team in University

摘　　要：Sessile drop technique was used to investigate the influence of Ti on the wetting behaviour of copper alloy on SiC substrate. A low contact angle of 15- for Cu alloy on SiC substrate is obtained at the temperature of 1 100 ℃. The interfacial energy is lowered by the segregation of Ti and the formation of reaction product TiC, resulting in the significant enhancement of wettability. Ti is found to almost completely segregate to Cu/SiC interface. This agrees well with a coverage of 99.8%Ti at the Cu/SiC interface predicted from a simple model based on Gibbs adsorption isotherm. SiCp/Cu composites are produced by pressureless infiltration of copper alloy into Ti-activated SiC preform. The volume fraction of SiC reaches 57%. The densification achieves 97.5%. The bending strength varies from 150 MPa to 250 MPa and increases with decreasing particle size.Sessile drop technique was used to investigate the influence of Ti on the wetting behaviour of copper alloy on SiC substrate. A low contact angle of 15° for Cu alloy on SiC substrate is obtained at the temperature of 1 100℃. The interfacial energy is lowered by the segregation of Ti and the formation of reaction product TiC, resulting in the significant enhancement of wettability. Ti is found to almost completely segregate to Cu/SiC interface. This agrees well with a coverage of 99.8%Ti at the Cu/SiC interface predicted fi＇om a simple model based on Gibbs adsorption isotherm. SiCp/Cu composites are produced by pressureless infiltration of copper alloy into Ti-activated SiC preform. The volume fraction of SiC reaches 57%. The densiflcation achieves 97.5%. The bending strength varies fi＇om 150 MPa to 250 MPa and increases with decreasing particle size.

关 键 词：碳化硅/铜复合物 金属模版复合物 无压渗透 可湿性 机械性能 

分 类 号：TB333[一般工业技术—材料科学与工程]