液晶阵列四次光刻工艺中光刻胶灰化工艺的研究  

Photoresist Ashing in Four-Mask Fabrication of Thin Film Transistor Liquid Crystal Display

作　　者：刘翔[1] 王章涛[2] 崔祥彦[2] 邓振波[1] 邱海军[2] 

机构地区：[1]北京京东方光电科技有限公司,北京100176 [2]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《真空科学与技术学报》2008年第4期291-294,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：光刻胶的灰化是TFT四次光刻工艺的核心工艺之一,本文研究了TFT四次光刻工艺中光刻胶的灰化工艺,得到了功率、气压、灰化气体对光刻胶灰化速率和均匀度的影响趋势。研究表明,纯O2气体对光刻胶有很好的灰化作用,但其会导致下一层金属Mo的表面发生氧化,从而阻止下层金属的刻蚀。在灰化气体中加入少量SF6,能有效地去除生成的金属氧化物,提高下层金属的刻蚀速率。在优化的灰化工艺条件下,制作的TFT具有良好的电学特性。Photo-resist ashing, in the four-mask fabrication of the thin film transistor （TFT） liquid crystal display （LCD）, was performaed. The influence of the power, pressure and flow rates of gases on the photo-resist ashing rate and its uniformity was experimentally evaluated. The results show that the power and pressure considerably affect the ashing rate and its uniformity respectively, and that pure oxygen strongly improves the ashing because of the formation of Mo oxides, which prevents the metal layers underneath the oxides from being etched. Moreover, addition of small amount of SF6 to the ashing gas mixture effectively etches away the molybdenum oxides and promotes eching rate of the metal layer. The judicious choice of the photo-resist ashing conditions results in the TFrs with excellent electrical characteristics.

关 键 词：薄膜晶体管 灰化 四次光刻 光刻胶 

分 类 号：TN305.7[电子电信—物理电子学]