电场增强金属Al和Ni诱导非晶硅横向结晶  

Electric Field-Aided Metal-Induced Lateral Crystallization of Amorphous Silicon

作　　者：王光伟[1] 张建民[1] 

机构地区：[1]天津工程师范大学电子工程系,天津300222

出　　处：《真空科学与技术学报》2008年第4期325-330,共6页Chinese Journal of Vacuum Science and Technology

基　　金：天津市高校科技发展基金项目(No.20060605)

摘　　要：本文分析了Al和Ni在外加电场作用下诱导非晶硅(a-Si)薄膜横向结晶的特点和机理。对影响非晶硅结晶的诸多因素,如场强、金属种类和退火条件进行了研究。简要概述了金属诱导横向结晶(MILC)相对于其它一些结晶工艺的优势及其在薄膜晶体管(TFT)中的应用。指出适当强度的电场可显著加快横向诱导结晶的速率,但场强超过一临界值后,则降低该速率,并基于电迁移效应较合理地解释了该现象。The amorphous silicon was crystallized by electric field aided, metal（Al, Ni）-induced lateral crystallization（MILC）. The micmstructures of the crystallized amorphous silicon were characterized with X-ray diffraction（XPD）and Raman spectroscopy. The influence of various factors, including electric field strength and distribution, metal specie, and annealing conditions, on crystallization of amorphous silicon was studied. Discussions focused on many advantages of MILE over other crystallization techniques and on its possible applications in fabrication of thin film transistors（TFT）. The results show that there exists a critical external electric field, below which, the rate of metal-induced lateral crystallization significantly increases, but above which the rate decreascs instead. The electro-migration could be the possible mechanism responsible for the existence of the critical field.

关 键 词：金属诱导横向结晶 电场增强横向诱导结晶 扩散 固相反应 晶粒生长 

分 类 号：TN304.8[电子电信—物理电子学] TN304.055