退火对Y_2O_3薄膜结构和电学性能的影响  

Effect of Annealing on Structure and Electrical Properties of Y_2O_3 Films

作　　者：霍会宾[1] 刘正堂[1] 阎锋[1] 

机构地区：[1]西北工业大学材料学院,西安710072

出　　处：《材料导报》2008年第7期123-125,138,共4页Materials Reports

基　　金：航空科学基金资助项目(04G53043)

摘　　要：采用射频磁控反应溅射法,成功地在n-Si衬底上制备了高κ栅介质Y2O3薄膜。对薄膜在不同温度退火后的结构、成分和电学性能进行了分析研究。结果表明,沉积态薄膜为非晶态,退火后薄膜开始晶化;沉积态薄膜中Y和O元素的原子浓度比基本符合化学计量比;薄膜具有较低的漏电流,退火后薄膜的漏电流降低。高频C-V曲线表明,退火后由于界面层的生长导致积聚电容减小。Y2O2 high-k thin films are prepared successfully by RF-magnetron reactive sputtering on n-Si sub- strates. The structure, components and electrical characteristics of Y2O3 films annealed at different temperatures are studied. The test results indicate that the as-deposited films are amorphous,and the annealed films are poly cry stallne. The atomic concentration ratio between O and Y accords with the stoichiometric proportion basically, Though the as-de- posited films show low leakage current, the annealed films are much lower. According to the high frequency C-V curves, the accumulation capacitance decreases after annealing due to the growth of interracial layer.

关 键 词：Y2O3薄膜 退火 漏电流 界面层 

分 类 号：O484[理学—固体物理]