Hg_(0.8)Cd_(0.2)Te晶体电学参数反常的检测和分析  

EXAMINATION AND ANALYSIS OF ANOMALOUS ELECTRICAL BEHAVIOR IN Hg_(0.8)Cd_(0.2)Te CRYSTALS

作　　者：杨建荣[1] 俞振中[1] 刘激鸣[1] 汤定元[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外研究》1990年第5期351-358,共8页

摘　　要：系统地分析和研究了N型Hg_(0.8)Cd_(0.2)Te晶体电学参数的各种表现,从中归纳出三种霍耳参数反常的Hg_(0.8)Cd_(0.2)Te材料及其霍耳参数随温度和磁场变化的特征。通过实验和理论分析找出这三类材料电参数反常的起因,给出了正确判断材料性能及获取真实反映材料电学特性参数的方法。A variety of Hall electical behaviors of N-type Hg_(0.8)Cd_(0.2)Te crystals are studied and analyzed systematically. Three kinds of samples with different anomalous Hall electrical behaviors have been found. By using experimental examination and theoretical analysis, the origins of these samples are discovered. The methods to judge the electrical properties of Hg_(0.8)Cd_(0.2)Te samples and to obtain the real Hall parameters of homogeneous Hg_(0.8)Cd_(0.2)Te samples are given.

关 键 词：HGCDTE 半导体 缺陷 电学性质 

分 类 号：TN304.25[电子电信—物理电子学]