掺Sb弱P型Hg_(1-x)Cd_xTe晶体光电特性研究  

OPTICAL AND ELECTRICAL PROPERTIES OF Sb-DOPED WEAKLY P-TYPE Hg_(1-x)Cd_xTe CRYSTAL

作　　者：王珏[1] 黄长河[2] 刘激呜 俞振中[3] 汤定元[3] 

机构地区：[1]同济大学物理系,上海200092 [2]复旦大学材料所,上海200433 [3]中国科学院上海技术物理研究所,上海200083

出　　处：《红外研究》1990年第5期359-364,共6页

基　　金：国家自然科学基金

摘　　要：利用杂质分凝效应制备弱P型掺Sb-HgCdTe晶体,测量了样品的电学特性、红外光谱及以掺杂样品作衬底制成的PN结的伏安特性,并与未掺杂P型HgCdTe进行了比较,结果表明用掺Sb-HgCdTe晶体可制作性能良好的光伏探测器。By using the effect of impurity Segregation, Sb-doped weakly P-type HgCdTe crystal is produced. The electrical property measurement of the doped material down to low temperature is performed with ionization energy determined. The optical absorption and the I-V characteristics of PN juction of Sb-doped material are investigated. The properties of Sb-doped material are compared with those of undoped one. The results indicate that good quality devices can be fa bricated using Sb-doped material as substrates.

关 键 词：掺杂 P型 HGCDTE 电学特性 SB 

分 类 号：P738[天文地球—海洋地质]