金属线宽与间距渐变的片上螺旋电感设计规则研究  

Layout Optimization of RF Integrated Inductor with Gradually Changed Structure

作　　者：刘婧[1] 石艳玲[1] 曹福全[1] 唐深群[1] 陈大为[1] 黄浩[2] 叶红波[2] 王勇[2] 薛琳艳 

机构地区：[1]华东师范大学信息学院电子系 [2]上海集成电路研发中心,上海201203

出　　处：《电子器件》2008年第4期1116-1119,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60676047,60606010);上海市科委项目资助(075007033、04QMX1419);上海-应用材料研究与发展基金等项目资助(0522)

摘　　要：在分析片上螺旋电感的磁场分布及射频损耗机制的基础上,研究了电感的金属线宽及线圈间距的变化对电感性能的影响,在大量数值分析基础上提出了金属线宽与间距之和不变,而金属线宽与间距之比从外圈到内圈逐渐减小的渐变型片上螺旋电感,并得到了实验验证,多组样品的测试结果与数值分析结果相吻合,以2.4GHz频段处为例,在高阻硅衬底上制备的5nH渐变结构电感的品质因子Q为11,比具有相同外径和电感值的固定金属线宽及间距的传统电感高19.6%。The performance of RF circuits is affected by that of the on-chip spiral inductors. On-chip inductor with gradually changed layout structure has been presented. In this structure, the sum of metal width and space of each coil is fixed while the ratio of the metal width to space is gradually reduced from outside to inside. Some valuable design rules have been obtained through a large number of data analyses. The experimental results have also corroborated the validity of the proposed method For example,Q factor of 11 has been obtained for a 5 nH inductor at 2. 7 GHz. It is 19. 6% better than the conventional inductor with fixed metal width and space.

关 键 词：片上螺旋电感 欧姆损耗 磁场损耗 渐变结构 品质因子 

分 类 号：TM55[电气工程—电器]