4～8GHz GaAs HBT单片双平衡混频器  

A 4～8 GHz Monolithic GaAs HBT Double-Balanced Mixer

作　　者：张健[1] 张海英[1] 陈立强[1] 李志强[1] 陈普峰[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2008年第4期1120-1123,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究规划资助项目"新结构InP基HEMT器件和E/D型HEMT电路"(G2002CB311901)资助项目

摘　　要：介绍了一种基于GaAs HBT的双平衡混频器。该混频器将射频、本振有源Balun集成其中,在RF和LO输入端分别采用不同的LC网络实现宽带的阻抗匹配。跨导级和开关单元之间采用交流耦合,并通过带宽扩展技术实现频带内的增益平坦。测量结果显示,该混频器匹配良好,射频端口S11在3～10GHz频带内小于-10dB。在固定中频200MHz情况下测试,在4～8GHz射频频带内,平均增益10dB,波动小于1dB,中频输出端口对射频信号的隔离度优于25dB,对本振信号的隔离度优于28dB;本振-射频端口隔离度优于32dB。在3.3V直流电压下测得的功耗为66mW。A GaAs heterojunction bipolar transistor （HBT） double-balanced mixer monolithic microwave integrated circuit （MMIC） is presented. Active baluns with wideband matching circuit were used to transform the input single-ended signal into differential. The transconductance stage and the switching stage are ac-coupled to improve the gain and linearity performance under low supply voltage. Bandwidth extension techniques are used to increase the conversion gain at high frequency. The test results showed that the mixer achieved good matching at RF port with Sll less than -10 dB from 3 to 10 GHz. With a fixed IF of 200 MHz, the mixer conversion gain from 4 to 8 GHz is about 10 dB with ripple less than 1 dB. The measured RF-2-IF isolation and LO-2-IF isolation are better than 25 dB and 28 dB, respectively. The LOF isolation is better than 32 dB in the whole frequency range. The chip consumes 66 mW with a 3. 3 V power supply.

关 键 词：GAAS HBT 混频器 阻抗匹配 带宽扩展 

分 类 号：TN948.53[电子电信—信号与信息处理] TN304.23[电子电信—信息与通信工程]