表面钝化对HfTiON栅介质Ge MOS电容性能的影响  

Impacts of Surface Passivation Process on the Performances of Ge MOS Capacitor with HfTiON Gate Dielectric

作　　者：邹晓[1] 徐静平[2] 黎沛涛[3] 李春霞[3] 

机构地区：[1]江汉大学机电与建筑工程学院,武汉430056 [2]华中科技大学电子科学与技术系,武汉430074 [3]香港大学电机与电子工程系,薄扶林道,香港

出　　处：《电子器件》2008年第4期1134-1136,1140,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助项目(60576021,60776016);中国香港特别行政区(HKSAR)科研资助委员会资助项目(RGC)(HKU7142/05E)

摘　　要：通过NO、N2O对Ge衬底进行表面钝化,生长GeOxNy界面层,然后采用反应磁控共溅射方法制备HfTiN薄膜,并利用湿N2气氛退火,将HfTiN转化为HfTiON高κ栅介质。研究了表面钝化对MOS器件性能的影响,结果表明,湿NO表面钝化能改善界面质量,有效降低MOS电容的栅极漏电流,增强器件的可靠性。GeOxNy interlayer is grown on Ge substrate by surface passivation, followed by HfTiN film deposited by reactive co-sputtering, and wet N2 annealing is applied to transform HfTiN to HfTiON high-κ gate dielectric. The impacts of different wet gas surface passivation on the electrical performances of Ge MOS capacitors were investigated. Experimental results indicated that wet NO passivation can effectively improve interface quality, decrease gate leakage and enhance reliability of Ge MOS devices.

关 键 词：锗金属氧化物半导体 氮化氧化钛铪 表面钝化 界面层 

分 类 号：TN305.5[电子电信—物理电子学] TN386.1