多双曲正切法则在高线性度CMOS混频器设计中的分析与应用  

Analysis and Application of Multi-tanh Principle in Highly Linear CMOS Mixer Design

作　　者：沈怿皓[1] 张润曦[1] 张炜杰[1] 陈亦灏[1] 李勇[1] 景一欧[1] 赖宗声[1] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062

出　　处：《电子器件》2008年第4期1150-1154,共5页Chinese Journal of Electron Devices

基　　金：上海市科委项目资助(AM-06SA14);江苏省ASIC设计重点实验室资助(JSICK0601);上海市科委基金项目资助(AM07SA04)

摘　　要：研究了CMOS电路中多双曲正切法则的应用对线性度产生的影响。分析并推导了两种非平衡差分对结构的差分输出电流和等效跨导的公式。给出了电路线性度最优时,多补偿偏置结构的补偿偏置电压VK的表达式。基于理论分析结果,设计了一个应用多双曲正切法则的CMOS吉尔伯特混频器电路。流片采用UMC0.18μmRF-CMOS工艺,经过测量,所得到的参数与理论分析及仿真值吻合,证明了理论分析的可行性。The nonlinear behavior of the multi-tanh principle used in CMOS IC design is investigated. The equations of differential output current and transconductance of unbalanced differential pair are detailedly derived. The optimal bias offset voltage of unbalanced differential pair using multi-tanh principle is presented. Based on the result of analysis, a CMOS mixer using multi-tanh principle is implemented in UMC 0. 18 μm RF-CMOS technology. The fact that the on-board measured results are very similar with the discussed and simulated results verifies the feasibility of methodologies described in this paper.

关 键 词：CMOS射频集成电路 双曲正切法则 线性度 混频器 

分 类 号：TN492[电子电信—微电子学与固体电子学]