一种用于单片UHF RFID阅读器中的低相位噪声LC VCO设计  

A Low Phase noise LC VCO for Single Chip UHF RFID Reader

作　　者：谢传文[1] 陈磊[1] 陈子晏[1] 李萌[1] 张润曦[1] 赖宗声[1] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062

出　　处：《电子器件》2008年第4期1163-1166,共4页Chinese Journal of Electron Devices

基　　金：上海市科委项目802.11a/b/g WLAN射频前段双频切换及时研究资助(06SA14)

摘　　要：介绍了一种适用于UHF RFID(Radio Frequency Identification)阅读器的低相位噪声压控振荡器(VCO)电路。通过在传统的VCO电路中加入抑制电源噪声的regulator并在共模端加入平衡滤波电路对尾电流源的二次谐波分量进行抑制来降低1/f3区域的相位噪声,同时选取合适的电感值及其Q值使得VCO在1/f2区域也能获得较佳的相位噪声性能。同时,文中给出了本设计中使用的低噪声基准源电路。整个电路采用UMC0.18μm MM/RF CMOS工艺实现,仿真与测试结果显示所提出的VCO结构和传统VCO相比几乎在所有区域内对相噪声均有5dB的改善。本设计使用的电源电压为3.3V,VCO中心频率为1.8GHz,调谐范围约为11%,频偏1MHz处相位噪声约为-127dBc/Hz,总电流约为7.2mA。A low phase noise VCO （voltage controlled oscillator） for single chip UHF RFID Reader is proposed. The regulator and filtering technology are adopted in order to suppress the noise from VDD and shot the second harmonic of current source for phase noise reduction in 1/f^3 region. Meanwhile, proper L with a relative better Q value is chosen to improve phase noise in 1/f^2 region. Low noise bandgap is also added in the propose VCO. The VCO is implemented using UMC0. 18 μm MM/RF CMOS technology. Compared with the traditional VCO, simulation result shows the phase noise reduction is around 5 dB in all frequency regions. The center frequency of proposed VCO is 1.8 GHz with the tuning rage of 11% while the power consumption is 7. 2 mA at 3.3 V. The VCO has phase noise of -127 dBc/Hz@1 MHz.

关 键 词：超高频射频识别 单片集成 阅读器 低相位噪声 

分 类 号：TN75[电子电信—电路与系统] TM54[电气工程—电器]