β-FeSi_2薄膜的结构与光电特性  

Structural and Optoelectronic Properties of β-FeSi_2 Films

作　　者：祝红芳[1] 沈鸿烈[2] 尹玉刚[2] 鲁林峰[2] 

机构地区：[1]江西工业职业技术学院,江西南昌330039 [2]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《南昌大学学报（理科版）》2008年第3期247-250,共4页Journal of Nanchang University(Natural Science)

基　　金：国家863计划资助项目(2006AA032219)

摘　　要：用磁控溅射法沉积了Fe/Si多层膜和Fe单层膜,在真空和Ar气中热退火2 h后制备了β-FeSi2半导体光电薄膜。发现Fe/Si多层膜在880℃温度下热退火后,制备的β-FeSi2薄膜的XRD结果均呈现β(220)/(202)择优取向,而Fe单层膜制备的β-FeSi2样品则呈无规则取向。原子力显微镜分析表明,Ar气退火的样品表面粗糙度大于真空退火的样品。根据光吸收谱测量,Fe/Si多层膜制备的β-FeSi2薄膜的禁带宽度室温下为0.88 eV。由Fe/Si多层膜制备的β-FeSi2薄膜具有明显的光电导效应,这种效应在真空退火样品中更为显著,在40W光源照射下,光电导效应大于30%。Fe/Si muhilayer and Fe single layer were deposited by magnetron sputtering. Semiconducting β-FeSi2 films were fabricated after annealing at vacuum or Ar atmosphere for 2 hours. Highly （220）/（ 202 ） oriented β-FeSi2 films were obtained from the Fe/Si multilayer samples after thermal annealing at temperatures of 880 ℃ , while - FeSi2 films with random orientation were found in samples from Fe single layer for the same annealing condition according to XRD patterns. Atomic force microscope observation revealed that samples＇ surface roughness in sam- ples prepared in Ar atmosphere is larger than that prepared in vacuum. Optical absorption spectra demonstrated that the β-FeSi2 films from Fe/Si muhilayer have a direct band gap about 0.88 eV at room temperature. An obvious photoeonduction effect was found in samples prepared from Fe/Si muhilayer in Ar atmosphere and it became larger in samples annealed in vacuum environment. Under an irradiation of 40W lamp, the largest value of observed photo- conduction effect is over 30%.

关 键 词：β-FeSi2薄膜 磁控溅射 择优取向 光电导效应 

分 类 号：O484.1[理学—固体物理] TQ320.72[理学—物理]