Electronic states of InAs/GaAs tyre-shape quantum ring  

作　　者：王传道 杨富华 封松林 

机构地区：[1]National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2008年第8期3054-3057,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 60521001)

摘　　要：In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring （TSQR） by using the plane wave basis. The results show that the electron energy levels axe sensitively dependent on the TSQR＇s section thickness d, and insensitively dependent on TSQR＇s section inner radius R1 and TSQR＇s inner radius R2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring （TSQR） by using the plane wave basis. The results show that the electron energy levels axe sensitively dependent on the TSQR＇s section thickness d, and insensitively dependent on TSQR＇s section inner radius R1 and TSQR＇s inner radius R2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.

关 键 词：tyre-shape quantum ring （TSQR） plan wave energy level 

分 类 号：O471.1[理学—半导体物理]